FIELD: chemistry.
SUBSTANCE: silicon polycrystals are produced in a vertical apparatus which provides the required temperature gradient, in two cycles of directed crystallisation with addition of a silicon-boron alloy or heavily gallium-doped germanium at the second cycle to obtain p-type silicon, and to obtain n-type silicon - an alloy in the form of heavily arsenic-doped germanium.
EFFECT: method provides significant saving owing to the user of cheap raw material - metallurgical black silicon.
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