METHOD OF PRODUCING CYCLOPROPANE FULLERENE DERIVATIVES, USE OF ORGANIC FULLERENE DERIVATIVES AS MATERIALS FOR ELECTRONIC SEMICONDUCTOR DEVICES, ORGANIC FIELD-EFFECT TRANSISTOR, ORGANIC PHOTOVOLTAIC CELL, ORGANIC FIELD-EFFECT TRANSISTOR AND ORGANIC PHOTOVOLTAIC CELL Russian patent published in 2014 - IPC C07C67/317 C07C62/34 H01L29/772 H01L31/248 H01L29/04 H01L51/00 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing cyclopropane fullerene derivatives of general formula 2 by heating a non-modified fullerene with tosylhydrazine in the presence of a solvent and a base. The process is carried out with tosylhydrazine of α-keto acetic ester of general formula 1 (R₁-C(=N-NH-Ts)COOR (1), where in general formulae 1 and 2, the radical R denotes a linear or branched C_n aliphatic radical, where n ranges from 1 to 50; radical R¹ denotes a C₆ aromatic radical; Fu is fullerene C₆₀ fullerene C₇₀, or a higher fullerene C_>70, or a mixture of fullerenes C₆₀ and C₇₀ (total content of 95.0-99.999% by weight) and higher fullerenes (C_>70, content of 0.001-5.0% by weight). The method enables to obtain fullerene derivatives having in their structure an ester group which is directly bonded to the cyclopropane moiety in the fullerene sphere, using readily available α-keto acetic esters.

EFFECT: invention relates to use of cyclopropane fullerene derivatives of general formula 2 as semiconductor materials for electronic semiconductor devices, materials for an organic field-effect transistor and materials for an organic photovoltaic cell.

6 cl, 13 dwg, 3 ex