PHOTO-SWITCHABLE AND ELECTRICALLY-SWITCHABLE ORGANIC FIELD-EFFECT TRANSISTOR, MANUFACTURING METHOD THEREOF AND USE THEREOF AS STORAGE DEVICE Russian patent published in 2016 - IPC H01L51/05 H01L51/40 B82B1/00 B82B3/00 

FIELD: electronics.

SUBSTANCE: invention relates to organic electronics, specifically to memory devices based on organic field effect transistors fabricated using photochromic compounds as part of active layer disposed at boundary between layer of semiconductor material and insulator. Invention provides formation and use of photo-switchable and electrically switchable organic field effect transistors, having in their structure a layer of photochromic molecules located on boundary between layer of semiconductor material and an insulator.

EFFECT: technical results achieved in implementation of claimed invention are a simple structure and technology of manufacturing photo-switchable and electrically switchable field effect transistors; possibility of creating multiple discrete states with different threshold voltages; achieving significant differences in currents I_DS for different states (up to 10,000 times); providing spectral sensitivity of device: impact of light pulses of different wavelengths converts transistor in different states; enabling use of photo-switchable and electrically switchable FET as multibit memory cell; enabling optical and electrical programming of said memory cells; higher information recording density by implementing multibit mode.

4 cl, 10 dwg