FIELD: chemistry.
SUBSTANCE: invention relates to technology of obtaining polycrystals of a semiconductor compound of groups II=VI. Two or more initial elements are introduced into a semipermeable for air internal reservoir from pBN 6a, the internal reservoir is introduced into a semipermeable for air heat-resistant external graphite reservoir 6b, a surface of which is covered with a glass fibre-type agent, and placed into a high-pressure furnace 1, which has heating means 7. Air inside the high-pressure furnace is pumped out, the furnace is filled with inert gas under specified pressure, the external reservoir and the internal reservoir are heated and temperature is increased by applying heating means. The initial elements inside the internal reservoir melt and interact, and, then, temperature is gradually reduced for polycrystals to grow.
EFFECT: invention makes it possible to carry out synthesis without application of quartz vessel as a reservoir for synthesis of polycrystals, which results in a possibility to apply the reservoir with large dimensions without output reduction and its multiple application, which contributes to reduction of expenditures.
3 cl, 3 dwg, 3 ex
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Authors
Dates
2014-08-20—Published
2011-03-11—Filed