METHOD FOR SYNTHESIS OF POLYCRYSTALLINE ZnGeP Russian patent published in 2024 - IPC C30B29/10 C30B28/12 C30B35/00 

FIELD: semiconductors.

SUBSTANCE: invention can be used in the manufacture of semiconductor materials. First, an alloy of equiatomic composition is prepared containing, at.%: 50 Zn and 50 Ge, for which container 5 for a polycrystal with the specified starting pure metals is installed and secured in the hot zone of reactor 1. Throttle container 4 with a filler that allows gas to pass through but is opaque to light is installed in the gradient zone of reactor 1. Container 2 with red phosphorus 3, taken in an amount in excess of the stoichiometric one, is installed in the cold zone to ensure the formation of pressure that prevents the dissociation of the ZnGeP₂ melt after its synthesis. A lid with a technological tube made of fused quartz is welded to loaded reactor 1 for connection to the vacuum system, and it is vacuumed using pump 8. The hot zone temperature is raised to the melting point of Zn metal, which is 420°C, at the same time heating the cold zone to 50-60°C. The components are mixed by rotating reactor 1 around its axis to dissolve solid Ge in Zn and form alloy 6. After heating reactor 1 with loading to a temperature of 110-115°C and holding for 1-1.5 hours, it is sealed off from the vacuum system and placed in a synthesis unit, made in the form of a thermally stable furnace with an adjustable-variable temperature profile, so that in the hot zone there is container 5 for the polycrystal, and in cold - container 2 with phosphorus 3. In the synthesis installation, a cold zone temperature profile of 510-520°C and hot zone of 1005-1010°C is formed. This temperature profile in these zones is maintained at a constant level for two hours. Then the temperature in the hot zone is raised over 50-70 minutes to 1050-1055°C, and the temperature of the cold zone is increased to 1060-1065°C, exceeding the melting point of ZnGeP₂, and homogenization exposure of the reactor contents is carried out for 8-12 hours. After this, directed cooling is carried out to form a primary polycrystalline ZnGeP₂ ingot.

EFFECT: invention makes it possible to prevent the decomposition of phosphides and eliminate their reverse transfer.

3 cl, 2 dwg, 1 ex