FIELD: manufacture of zinc selenide based light-emitting devices.
SUBSTANCE: proposed method for heat treatment of semiconductor compound ZnSe includes formation of aluminum film on surface of at least one ZnSe chip, placement of this at least one ZnSe chip in heat treatment chamber whose inner surface is formed of at least one material chosen from group of pyrolytic boron nitride, hexagonal-lattice boron nitride, sapphire, aluminum oxide, aluminum nitride, and polycrystalline diamond, evacuation of chamber, and heat treatment of this at least one chip in gas environment incorporating zinc vapors. Description of invention also includes ZnSe chip subjected to heat treatment using mentioned method and device for heat treatment of ZnSe compound incorporating components used for implementing this method.
EFFECT: reduced resistivity of zinc selenide compound without reducing degree of its crystallinity.
10 cl, 2 dwg
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