METHOD OF NON-CONTACT DETERMINATION OF AMPLIFICATION OF LOCAL ELECTRIC FIELD AND WORK FUNCTION IN NANO OR MICROSTRUCTURAL EMITTERS Russian patent published in 2014 - IPC B82B1/00 

FIELD: electricity.

SUBSTANCE: dark characteristic of tunnel emission current is measured with increase of voltage on the anode and the value of voltage V_∞ is determined, the measured surface of the emitter is eradiated with a laser beam of ultraviolet or visible band with a fixed value of optical power and wavelength λ₁, the value of tunnel photoemissive current at increase of voltage on the anode is measured, and the value of voltage V_∞λ1 is fixed, the value of work function A and value of amplification of local electric field β In a spatial area of the emitter irradiation from the given relation are determined, or the measured surface of the emitter is eradiated additionally with a laser beam at another wavelength λ₂ of ultraviolet or visual band with maximum difference with reference to the first wavelength, the value of voltage V_∞λ2 is determined, and also the value of amplification of a local electric field in a spatial area of the emitter irradiation and value of the work function A from the given relation are determined.

EFFECT: possibility for determination of local electric field at simultaneous determination of work function of electrons from the emitter.

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