METHOD OF MEASURING NANO-SIZED CONDUCTING SURFACE RELIEF WITH PHOTON ULTIMATE ANALYSIS OF MATERIAL Russian patent published in 2011 - IPC G01Q60/10 B82B3/00 B82Y35/00 

FIELD: physics.

SUBSTANCE: proposed method comprises defining 3D profile of semiconductor or metal surface on bringing probe with metal tip thereto along vertical coordinate Z. Note here that surface under probe nano-tip is irradiated by optical radiation with wavelength from IR to UV with constant spectral power of radiation. Wavelength λb corresponding to abrupt increase in tunnel current is recorded to determine semiconductor or metal material by power width of semiconductor forbidden zone E_g or work function of electrons A from metal at surface local area defined by probe nano-tip from relation E_g=1238/λb, A=1238/λ_b, where λ_b is boundary wavelength in nm; E_g, A is forbidden zone width for probed semiconductor or work function for metal in eV for given surface point.

EFFECT: contactless measurement of ultimate composition.

1 dwg