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2 530 568

(13)

(51)

IPC

A61L27/02(2006-01-01)

A61C8/00(2006-01-01)

C23C14/00(2006-01-01)

C23C14/58(2006-01-01)

(21) (22)

Application

2013119146/15, 2013-04-24

(24)

Start date

2013-04-24

(22)

Actual filing date

2013-04-24

(45)

Published

2014-10-10

(72)

Inventor

Muktarov Oryngali DzhuldgalievichPerinskaja Irina VladimirovnaLjasnikov Vladimir NikolaevichPerinskij Vladimir Vladimirovich

(73)

Holder

Federal'Noe Gosudarstvennoe Bjudzhetnoe Obrazovatel'Noe Uchrezhdenie Vysshego Professional'Nogo Obrazovanija Gosudarstvennyj Tekhnicheskij Universitet Imeni Gagarina Ju.A." Imeni Gagarina Ju.A.)

METHOD FOR MAKING ENDOSSEOUS IMPLANT WITH ION BEAM MODIFICATION Russian patent published in 2014 - IPC A61L27/02 A61C8/00 C23C14/00 C23C14/58

Abstract RU 2530568 C1

FIELD: medicine.

SUBSTANCE: what is described is a method involving an implant surface sandblasting with aluminium oxide particles, plasma-based layer-by-layer deposition of a powdered titanium and calcium hydroxyapatite coating system on the implant base and exposure of the multilayered biocompatible coating system in the evacuated hydrocarbon gas environment to high-energy inert gas ions of power 40-130 keV and exposure dose of 2000-5000 mcCl/cm². Before the layer-by-layer plasma deposition, the metal surface of the metal base is ion beam modified by exposing to high-energy ions in the evacuated environment.

EFFECT: endosseous implants have high strength of the metal base.

3 cl, 3 dwg, 2 tbl

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RU 2 530 568 C1

Authors

Muktarov Oryngali Dzhuldgalievich

Perinskaja Irina Vladimirovna

Ljasnikov Vladimir Nikolaevich

Perinskij Vladimir Vladimirovich

Dates

2014-10-10—Published

2013-04-24—Filed