RESEARCH METHOD OF NONLINEAR SPIN RESONANCE IN SEMICONDUCTORS AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2015 - IPC G01N21/39 

FIELD: nanotechnology.

SUBSTANCE: use: for research of nonlinear spin resonance in bulk, thin film and two-dimensional semiconductor nanostructures. The essence of the invention consists in the fact that for research of nonlinear spin resonance the sample is cooled, affected with changing constant and weak alternating magnetic field that changes with sound frequency Ω, the sample is affected with two coherent radiations: the powerful pump radiation and weak test radiation, having the right circular polarization, the signal is registered, which is proportional to the second derivative of the power of the test radiation at a frequency of 2Ω, the resonant magnetic field is determined, the shape of curve of the nonlinear spin resonance is studied, the aligned coherent radiations are directed parallel to the constant magnetic field, the g-factor of the semiconductor under study is determined.

EFFECT: ensuring the possibility of determining the parameters of the energy zones in thin-film and two-dimensional semiconductor nanostructures.

2 cl, 1 dwg