METHOD OF THE SEMICONDUCTORS QUANTIZED HALL RESISTANCE CONTACTLESS DETERMINATION AND DEVICE FOR ITS IMPLEMENTATION Russian patent published in 2018 - IPC G01R27/00 H01L21/66 

FIELD: defectoscopy.

SUBSTANCE: use for nondestructive testing of semiconductors parameters containing degenerate electron gas. Summary of invention is in the fact that the sample is cooled down, subjected to varying permanent magnetic field with induction B and an alternating magnetic field varying with an audio frequency having an amplitude, which is many times smaller than the induction B, the sample is irradiated with SHF radiation of a given frequency, selecting the radiation frequency is chosen to be less than the frequency of charge carriers collisions with semiconductor atoms, recording the signal proportional to the second derivative of power passing through the diaphragm and a sample of the SHF radiation as a function of the induction B, measuring the magnetic field induction value corresponding to the signal maximum, and determining the quantized Hall resistance.

EFFECT: providing the possibility of the quantized Hall resistance determining in the sample local regions.

2 cl, 2 dwg