FIELD: instrument making.
SUBSTANCE: invention is related to methods for nondestructive check of semiconductor and low-size semiconductor nanostructure parametres. Iin method for contactless definition of quantised Hall resistance of semiconductors, including semiconductor cooling down to helium temperatures, its exposure to alternating permanent magnetic field, induction vector B of which is perpendicular to surface of sample, and additionally to alternating magnetic field that varies with sonic frequency, having amplitude that is much less than B and induction vector directed parallel to vector B, radiation of sample with microwave radiation of specified frequency in direction, which is parallel to induction vector B of permanent magnetic field, selection of radiation frequency less than frequency of charge carriers collisions with atoms of semiconductor, additional cooling of semiconductor down to temperature below 2K, registration of signal proportional to second derivative of microwave radiation capacity depending on magnetic field B, measurement of magnetic field value that corresponds to minimum of reflected signal, and definition of quantiszed Hall resistance in wide range of quantising magnetic fields by means of calculations according to given formula.
EFFECT: wider application field.
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