SYNTHETIC CVD DIAMOND Russian patent published in 2014 - IPC C30B25/02 C30B29/04 C23C16/27 A44C17/00 

FIELD: chemistry.

SUBSTANCE: invention relates to technology of production of synthetic diamond material, which can be applied in electronic devices. Diamond material contains single substituting nitrogen $$\left(N_s^0\right)$$ in concentration more than 0.5 ppm and having such complete integral absorption in visible area from 350 nm to 750 nm, that at least nearly 35% of absorption is attributed to $${\text{N}}_{\text{s}}^{\text{0}}\text{.}$$ Diamond material is obtained by chemical deposition from vapour or gas phase (CVD) on substrate in synthesis medium, which contains nitrogen in atomic concentration from nearly 0.4 ppm to nearly 50 ppm, and gas-source contains: atomic part of hydrogen, H_f from nearly 0.40 to nearly 0.75, atom part of carbon, C_f, from nearly 0.15 to nearly 0.30; atomic part of oxygen, O_f, from nearly -.13 to nearly 0.40; and H_f+C_f+O_f=1; ratio of atomic part of carbon to atomic part of oxygen, C_f:O_f, satisfy the ratio nearly 0.45:1<C_f:O_f< nearly 1.25:1; and gas-source contains atoms of hydrogen, added in form of hydrogen molecules, H₂, with atomic part of the total quantity of present atoms of hydrogen, oxygen and carbon between 0.05 and 0.40; and atomic parts of H_f, C_f and O_f represent parts from the total quantity of atoms of hydrogen, oxygen and carbon, present in gas-source.

EFFECT: invention makes it possible to obtain diamond material with rather high content of nitrogen, which is evenly distributed, and which is free of other defects, which provides its electronic properties.

17 cl, 11 dwg, 6 ex