CVD-OBTAINED MONOCRYSTALLINE DIAMOND MATERIAL Russian patent published in 2016 - IPC C30B29/04 C30B25/10 C30B25/16 C30B25/20 C23C16/513 C23C16/27 H01L21/205 A44C17/00 

FIELD: chemistry.

SUBSTANCE: invention relates to technology of obtaining monocrystalline, obtained by chemical vapour deposition (CVD) synthetic diamond material, which can be used as quantum sensors, optic filters, parts of tools for mechanical processing and initial material for formation of coloured precious stones. Diamond material has the total nitrogen concentration immediately after growing, equal or higher than 5 ppm, and uniform distribution of defects, which is determined by one or more of the following characteristics: (i) the total concentration of nitrogen, when it is presented by secondary ion mass spectrometry (SIMS) on the area, equal or larger than 50×50 mcm, with application of analysis area of 10 mcm or smaller, possesses pointwise variation less than 30% of the average value of the total nitrogen concentration, or when it is presented by means of SIMS on the area, equal or larger than 200×200 mcm, with application of analysis area 60 mcm or smaller, possesses pointwise variation less than 30% of the average value of the total nitrogen concentration; (ii) concentration of nitrogen-vacancy defects (NV) immediately after growing equals or is higher than 50 ppb, when measured with application of measurements of UV-visible absorption at 77 K, wherein nitrogen-vacancy defects are uniformly distributed throughout diamond material in such a way that in case of excitation with application of source of laser radiation with wavelength 514 nm with spot size equal or smaller than 10 mcm at room temperature with application of 50 mW laser, operating in continuous mode, and presented on the area, equal or larger than 50×50 mcm, with data interval less than 10 mcm, there is low pointwise variation, ratio of areas of intensities of nitrogen-vacancy peaks of photoluminescence between regions of high photoluminescence intensity and regions of low photoluminescence intensity constitutes less than 2 for either photoluminescence peak (NV⁰) at 575 nm or photoluminescence peak (NV^-) at 637 nm; (iii) variation in Raman intensity is such that at excitation with application of source of laser radiation with wavelength 514 nm (resulting in Raman peak at 552.4 nm) with spot size equal or smaller than 10 mcm, at room temperature with application of 50 mW laser, operating in continuous mode, and presented on area, equal or larger than 50×50 mcm, with data interval less than 10 mcm, there is low pointwise variation, wherein ratio of areas of Raman peaks between regions of low Raman intensity and high Raman intensity constitutes less than 1.25; (iv) concentration of nitrogen-vacancy defects (NV) immediately after growing equals or is larger than 50 ppb when measured with application of measurements of UV-visible absorption at 77 K, wherein at excitation with application of source of laser radiation with wavelength 514 nm with spot size, equal or smaller than 10 mcm, at 77 K with application of 50 mW laser, operating in continuous mode, intensity at 575 nm, corresponding to NV⁰, more than 120 times exceeds Raman intensity at 552.4 nm, and/or intensity at 637 nm, corresponding to NV^-, more than 200 times exceeds Raman intensity at 552.4 nm; (v) concentration of single nitrogen substitution defects (N_s) equals or is larger than 5 ppm, wherein single nitrogen substitution defects are uniformly distributed throughout monocrystalline, CVD-obtained, synthetic diamond material, so that with application of characteristic infrared absorption at 1344 cm^-1 and with selection of area larger than area 0.5 mm², variation, obtained by division of standard deviation by mean value, constitutes less than 80%; (vi) variation in intensity of red luminescence, determined by means of standard deviation, divided by mean value, constitutes less than 15%; (vii) mean standard deviation in concentration of neutral single substitution nitrogen constitutes less than 80%; and (viii) intensity of colouration, measured with application of histogram of image, obtained by microscopy, with mean brightness level larger than 50, wherein intensity of colouration is homogeneous throughout monocrystalline synthetic diamond material, so that variation in gray colour, characterised by standard deviation of brightness level, divided by mean value of brightness level, constitutes less than 40%.

EFFECT: diamond material has high and homogeneous distribution of common nitrogen defects, single nitrogen substitution defects N_s, nitrogen-vacancy defects NV, does not have banding under photoluminescence conditions, homogeneity is achieved throughout entire diamond material, grown in the course of one cycle and from cycle to cycle of growing.

20 cl, 8 dwg, 5 tbl