FIELD: chemistry.
SUBSTANCE: method of producing semiconductor graphene comprises using a graphite workpiece, exposing the entire surface of the workpiece to a stream of slow neutrons, mechanical treatment of the workpiece to separate atomic layers of graphite with a given concentration of the 13C isotope which determines the band-gap.
EFFECT: achieving a specific concentration of the 13C isotope, which enables to open the band-gap by tens of meV.
3 dwg
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