METHOD OF PRODUCTION OF FLUOROGRAPHENE LAYER Russian patent published in 2014 - IPC C01B31/04 B82Y40/00 

FIELD: nanotechnology.

SUBSTANCE: invention relates to nanotechnology and is intended for use in creation of modern thin-film semiconductor devices and structures of nanoelectronics. In the method of production of fluorographene layer the layer of desired thickness is separated from the volume graphite and is placed on the substrate. Then a fluorination operation is carried out using hydrofluoric acid under conditions enabling to obtain fluorographene layers with thickness up to 10-15 nm. At that the silicon substrate is used. On its working surface a silicon oxide layer can previously be grown. Fluorination is carried out in the aqueous solution of hydrofluoric acid with the content of 3-7% HF with the treatment duration up to 30 minutes, but not less than t_cr, where the conductivity of fluorinated layers is changed. At that, when fluorination the temperatures up to 60°C are used.

EFFECT: improvement of quality of fluorographene layers is achieved, reduction of defectiveness, reduction of duration of the process, increase in ecological compatibility.

6 cl, 2 dwg