FIELD: process engineering.
SUBSTANCE: invention relates to production of diamonds for jewelry. This process comprises placing the substrate with diamond grain of preset size and preset optical orientation into chemical vapour-phase deposition (CVD). Then, hydrogen, hydrocarbon gas containing carbon, nitrogen and gas including diborane are fed into the chamber. Both are adapted for acceleration of diamond growth on said substrate. Electric field is applied to form plasma nearby said substrate to cause stepwise diamond growth thereat. CVD process is terminated in the chamber, faceting is performed and undesirable diamond is removed from grown diamond. Diamond is cleaned and facetted after annealing at preset temperature for preset time interval. Fining faceting of diamond is performed, it is finished and dyed.
EFFECT: white diamonds (G and H) with, practically, no defects.
13 cl, 10 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR OBTAINING GEM STONES | 2023 |
|
RU2808301C1 |
| OBTAINED BY CHEMICAL DEPOSITION FROM VAPOR PHASE MONOCRYSTALLINE SYNTHETIC DIAMOND MATERIALS, WHICH HAVE UNIFORM COLOUR | 2013 |
|
RU2595671C1 |
| COLOURLESS MONOCRYSTALLINE DIAMOND AND METHOD FOR PRODUCTION THEREOF | 2006 |
|
RU2473720C2 |
| COLOURLESS DIAMOND LAYER | 2006 |
|
RU2415204C2 |
| METHOD FOR MAKING FANCIFULLY COLOURED ORANGE MONOCRYSTALLINE CVD-DIAMOND, AND FINISHED PRODUCT | 2010 |
|
RU2497981C2 |
| CONTROLLED DOPING OF SYNTHETIC DIAMOND MATERIAL | 2011 |
|
RU2555018C2 |
| SUPERSTRONG SINGLE CRYSTALS OF CVD-DIAMOND AND THEIR THREE-DIMENSIONAL GROWTH | 2005 |
|
RU2389833C2 |
| BORON-ALLOYED DIAMOND | 2002 |
|
RU2315826C2 |
| PRODUCTION OF LABORATORY-GROWN DIAMONDS | 2020 |
|
RU2819979C2 |
| METHOD OF EMBEDDING MARK INTO DIAMOND, OBTAINED THROUGH CHEMICAL DEPOSITION | 2004 |
|
RU2382122C2 |
