CONTROLLED DOPING OF SYNTHETIC DIAMOND MATERIAL Russian patent published in 2015 - IPC C30B25/02 C30B25/14 C30B29/04 C30B31/06 C30B31/16 C23C16/27 C23C16/513 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of controlling concentration and uniformity of distribution of a dopant in synthetic CVD diamond material used in electronic devices and sensors. The diamond material is obtained in a microwave plasma reactor, having a plasma chamber 102 in which there is one or more substrate regions of a growth surface 105, on top of which the diamond material is deposited, a gas stream system 112 for feeding process gases into the plasma chamber 102 and a system 122 for removing the process gases therefrom. Microwave radiation is transmitted from a microwave generator 106 into the plasma chamber 102 through a microwave link 110 in order to generate plasma above the region of the growth surface 105 or below the region of the growth surface if the microwave plasma reactor is in an inverted configuration with the process gases flowing upwards. The gas stream system 112 includes a gas inlet, having one or more gas inlet pipes 124 located opposite the region of the growth surface 105 and configured to inject process gases towards the region of the growth surface 105, wherein the process gases are injected into the plasma chamber 102 through one or each gas inlet pipe 124 with a Reynolds number in the range of 1-100, integrally formed in the metal wall of the plasma chamber 102 located opposite the region of the growth surface 105. The plasma chamber 102 is configured to support standing microwave modes TM₀₁₁. The configuration of the microwave link 110 comprises a microwave window 119 for transmitting microwave radiation from the microwave generator 106 into the plasma chamber 102, which is located at the opposite end of the plasma chamber 102 relative to the region of the growth surface 105 and made in the form of an annular dielectric window.

EFFECT: invention enables to achieve a homogeneous chemical composition of diamond material grown in a single growth cycle while maintaining uniform plasma with a large area with very high growth rates and enables to achieve a high degree of controlling the level and distribution of defects and dopants in a diamond film without impurities and damages to the walls and the microwave window of a plasma chamber which can support compact standing microwave mode TM₀₁₁.

5 cl, 17 dwg