FIELD: carbon materials.
SUBSTANCE: invention relates to preparation of boron-alloyed monocrystalline diamond layers via gas phase chemical precipitation, which can be used in electronics and as jewelry stone. The subject matter is uniformity of summary boron concentration in above-mentioned layer. The latter is formed in one growth sector and characterized by thickness above 100 μm and/or volume exceeding 1 mm3. Boron-alloyed monocrystalline diamond preparation involves diamond substrate provision step, said substrate having surface containing substantially no crystal lattice defects, initial boron source-containing gas preparation step, initial gas decomposition step, and the step comprising homoepitaxial growth of diamond on indicated surface containing substantially no crystal lattice defects.
EFFECT: enabled preparation of thick high-purity monocrystalline diamond layers exhibiting uniform and useful electronic properties.
44 cl, 5 tbl, 7 ex
| Title | Year | Author | Number |
|---|---|---|---|
| MONOCRYSTAL DIAMOND LAYER OF HIGH THICKNESS, METHOD OF PRODUCTION OF SUCH LAYER AND PRECIOUS STONES MADE FROM THIS LAYER | 2001 |
|
RU2287028C2 |
| MONO-CRYSTAL DIAMOND PRODUCED BY CHEMICAL DEPOSITION METHOD FROM GAS PHASE AND METHOD OF PRODUCTION OF SUCH DIAMOND | 2001 |
|
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| OBTAINED BY CHEMICAL DEPOSITION FROM VAPOR PHASE MONOCRYSTALLINE SYNTHETIC DIAMOND MATERIALS, WHICH HAVE UNIFORM COLOUR | 2013 |
|
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| COLOURLESS MONOCRYSTALLINE DIAMOND AND METHOD FOR PRODUCTION THEREOF | 2006 |
|
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| COLOURLESS DIAMOND LAYER | 2006 |
|
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| CVD-OBTAINED MONOCRYSTALLINE DIAMOND MATERIAL | 2012 |
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| MONOCRYSTALLINE SYNTHETIC DIAMOND MATERIAL OBTAINED BY CHEMICAL DEPOSITION FROM GAS PHASE | 2017 |
|
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| METHOD OF EMBEDDING MARK INTO DIAMOND, OBTAINED THROUGH CHEMICAL DEPOSITION | 2004 |
|
RU2382122C2 |
| METHOD OF PRODUCING COLORED DIAMOND | 2002 |
|
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| PRODUCTION OF ALLOYS DIAMOND | 2013 |
|
RU2537491C2 |
