SUPERSTRONG SINGLE CRYSTALS OF CVD-DIAMOND AND THEIR THREE-DIMENSIONAL GROWTH Russian patent published in 2010 - IPC C30B25/00 C30B33/02 C30B29/04 A44C17/00 A61B17/32 G02B1/02 

FIELD: electricity.

SUBSTANCE: method includes placement of crystalline diamond nucleus in heat-absorbing holder made of substance having high melt temperature and high heat conductivity, in order to minimise temperature gradients in direction from edge to edge of diamond growth surface, control of diamond growth surface temperature so that temperature of growing diamond crystals is in the range of approximately 1050-1200°C, growing of diamond single crystal with the help of chemical deposition induced by microwave plasma from gas phase onto surface of diamond growth in deposition chamber, in which atmosphere is characterised by ratio of nitrogen to methane of approximately 4% N₂/CH₄ and annealing of diamond single crystal so that annealed single crystal of diamond has strength of at least 30 MPa m^1/2.

EFFECT: increased strength.

26 cl, 4 dwg