FIELD: chemistry.
SUBSTANCE: method includes the plasmodynamic synthesis of silicon carbide in a hypervelocity jet of an electric discharge plasma, which contains silicon and carbon in a ratio of 3.0:1, generated by a coaxial magnetic-plasma accelerator with graphite electrodes and directed into a closed volume, filled with gaseous argon under normal pressure and a temperature of 20°C, with the temperature of gaseous argon in the closed volume being changed in the range from -20°C to 19°C and from 21°C to 60°C.
EFFECT: regulation of nanocrystalline silicon carbide dispersion.
1 dwg, 1 tbl
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RU2707673C1 |
