BALANCED ACTIVE LOAD OF DIFFERENTIAL AMPLIFIERS FOR BIPOLAR FIELD RADIATION-RESISTANT PROCESSES Russian patent published in 2016 - IPC H03F3/00 

FIELD: electricity.

SUBSTANCE: invention is referred to usage of balanced active ensuring conversion of output current at symmetrical differential stages and their matching to intermediate output stages. The balanced active load is composed of the first (5) and second (6) output transistors, represented by field transistors with p-n junction FET, at that drain of the first (5) output p-n junction FET is coupled to emitter of the first (13) auxiliary transistor and through the second (14) auxiliary transistor it is coupled to the first power supply bus (9) of the power supply source, drain of the second (6) output p-n junction FET is coupled to emitter of the second (15) auxiliary transistor and through the second (16) auxiliary transistor it is coupled to the first power supply bus (9) of the power supply source, at that the second output of current-stabilizing two-terminal device (7) is coupled to the second power supply bus (17) of the power supply source matched to the first (11) and second (12) current outputs of the device, collector of the first (13) auxiliary transistor is coupled to the first current output (11) of the device, collector of the second (15) auxiliary transistor is coupled to the second current output (12) of the device while bases of the first (13) and second (14) auxiliary transistors are coupled to bases of the first (2) and second (4) input transistors.

EFFECT: development of low-temperature radiation-resistant balanced active load using bipolar filed process in structure of filed transistors thus allowing their usage at lower voltage or increase in range of output voltage changing when analogue microcircuits, for example, operational amplifiers, are included into the structure.

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