FIELD: computer engineering.
SUBSTANCE: invention can be used in the construction of failsafe and fault tolerant, radiation-resistant self-timed circuits. Technical result is achieved by the introduction of the six blocks of transistors p-conductivity - the third, fourth, fifth, sixth, seventh and eighth, six blocks of transistors n-conductivity - the third, fourth, fifth, sixth, seventh and eighth, the second input bus connection "+" supply and second input bus connection "zero volts".
EFFECT: technical result of the invention is to improve fault tolerance in case of failure of transistors and the power supply.
1 cl, 7 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| MAJORITY DEVICE | 2016 |
|
RU2618192C1 |
| FAULT-TOLERANT SELF-SYNCHRONOUS SINGLE-CYCLE RS-TRIGGER WITH ZERO SPACER | 2019 |
|
RU2725780C1 |
| PROGRAMMABLE LOGIC DEVICE | 2017 |
|
RU2653304C1 |
| FUNCTIONALLY COMPLETE TOLERANT ELEMENT | 2011 |
|
RU2449469C1 |
| HYSTERESIS TRIGGER | 2016 |
|
RU2628152C1 |
| FAULT-TOLERANT SELF-SYNCHRONOUS SINGLE-CYCLE RS-TRIGGER WITH A SINGLE SPACER | 2019 |
|
RU2725781C1 |
| CURRENT THRESHOLD ELEMENT OF LEFT CYCLIC SHIFT | 2021 |
|
RU2776031C1 |
| RIGHT CYCLIC SHIFT CURRENT THRESHOLD ELEMENT | 2020 |
|
RU2725149C1 |
| CURRENT THRESHOLD TRINITY D-TRIGGER | 2022 |
|
RU2784374C1 |
| SYMMETRICAL MULTIPLEXER ON COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (COMS) TRANSISTORS | 2018 |
|
RU2689820C1 |
