FIELD: technological processes.
SUBSTANCE: invention relates to a method of producing fine powders of indium oxide InO3, which can be used as semiconductors and gas sensors. Method for production of submicron indium oxide powder involves preparation of initial aqueous solution of indium sulphate, which is brought into contact with a reagent - precipitation agent, represented by alkali gel anionites AV-17-8 or Purolite A300 in hydroxide form. After contact with anionite product-precursor is separated from solution, washed with water, dried and annealed at temperature 400 °C.
EFFECT: proposed method enables to obtain finely dispersed indium oxide powder with bimodal distribution (50, 150 nm) of particle size of cation-free precipitation agent, without use of aggressive media and pressure.
1 cl, 2 dwg, 4 ex
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