CMOS IC OF HIGHER RADIATION RESISTANCE Russian patent published in 2015 - IPC H01L27/10 

FIELD: physics.

SUBSTANCE: invention relates to submicron CMOS ICs operated at radiation. Perfected CMOS IC comprises chip-based system for info conversion and/or storage. It includes negative voltage generator including interconnected control unit to compare normalised leaks currents, substrate p- and n-field transistors, threshold device, clock pulse generator and charge pumping unit. Clock pulse generator with control input realised internal logic of negative voltage generator by clock pulse generator ON/OFF jobs subject to logical voltage level at said input. In compliance with one version, said generator has first and second external inputs to realise external logic of negative voltage generator. Here, at first combination of logical inputs at said inputs said generator operates in compliance with its internal logic. At second combination of said levels, said generator is ON while at third combination it is OFF.

EFFECT: minimised consumed static current, enhanced performances, higher radiation resistance.

8 cl, 10 dwg, 2 tbl