FIELD: engineering of powerful key semiconductor devices and force integration circuits, combining advantages of field control and bipolar mechanism of current transfer, can possibly be used for engineering and production of power engineering-related electronic.
SUBSTANCE: semiconductor key device has thyristor with electrostatic induction 1, controlling n-channeled transistor 2 and an additional transistor 3 acting as voltage-adjusting element, which is n-channeled and gate 12 of which is connected to drain 8 of transistor 2. drain 5 of thyristor with electrostatic induction 1 is connected to first force output A, source 4 of thyristor with electrostatic induction 1 is connected to drain 8 of transistor 3, and gate 6 of thyristor with electrostatic induction 1 is connected to drain 11 of transistor 3, source 10 of which is connected to source 7 of transistor 2, which is connected to second force output K, acting as the common bus. Gate 9 of transistor 2 is connected to controlling output.
EFFECT: reliable operation in current overload modes and better dynamic parameters due to fast commutation of load current.
1 cl, 7 dwg
