FIELD: electronics.
SUBSTANCE: invention relates to optoelectronics and can be used in making optical devices based on optical crystals, having high electric conductivity. Method is implemented as follows: crystal with high electric conductivity is placed in one arm of Mach-Zehnder interferometer, holders (electrodes) are electrically insulated from crystal and alternating pulse voltage is applied to them. Using photodetector recording the change in interference pattern intensity and by measured change in interference pattern intensity electrooptic coefficient is calculated.
EFFECT: technical result is enabling measurement of electro-optical coefficient in crystals with high electric conductivity.
1 cl, 2 dwg
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