FIELD: chemistry.
SUBSTANCE: invention relates to inorganic chemistry and concerns production of high-purity indium monoiodide. Method of producing high-purity indium monoiodide does not require starting materials of high purity. Method involves reaction of indium metal, taken with 10 % stoichiometric excess, with iodine at atmospheric pressure in quartz installation at a temperature of 400±5 °C, followed by purification of product by rectification. Rectification is carried out in an argon atmosphere in same installation in which synthesis is carried out. Maximum possible output of product is 85–88 %.
EFFECT: invention simplifies process of producing high-purity indium monoiodide, improves efficiency and environmental friendliness of process.
3 cl, 4 dwg, 1 tbl, 7 ex
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