METHOD FOR PRODUCING HIGH-PURITY SILICON TETRACHLORIDE Russian patent published in 2018 - IPC C01B33/107 

FIELD: technological processes.

SUBSTANCE: invention relates to a technology for producing high-purity silicon tetrachloride and can be used in the production of silicon tetrachloride of optical grade, used in the synthesis technology of scintillation materials intended for the creation of detecting medical systems, and in the semiconductor industry for the production of high-resistance epitaxial structures. Method includes chlorination of technical silicon tetrachloride in a reactor by feeding chlorine under a layer of liquid silicon tetrachloride by 5–10 wt. % more from the stoichiometrically necessary, at a rate of not more than 1.5 l/h per 1 kg of the original silicon tetrachloride with holding of the chlorinated product for 1–24 h at daylight illumination through a viewing window and the subsequent fractional distillation of the chlorinated product on a fractionating tray quartz column with the selection of light and target fractions, herewith the selection of the light fraction with chlorine dissolved in it is directed to a chlorination stage, and the finished product is taken at a reflux ratio of at least 20. Excess of chlorine in the process of chlorination is provided by adding a light fraction obtained in the process of fractional distillation of silicon tetrachloride, and quartz glass containing no borosilicates is used as the material of the viewing window in the chlorination reactor of silicon tetrachloride.

EFFECT: invention makes it possible to obtain silicon tetrachloride with a content of silicon chlorides with H-groups and metal impurities at level 1⋅10^-7–2½⋅10^-9 wt%.

3 cl, 1 tbl, 6 ex