HIGH-FREQUENCY PHASE SHIFTER ON MOS-TRANSISTORS Russian patent published in 2017 - IPC H01P1/18 

FIELD: radio engineering.

SUBSTANCE: invention relates to radio engineering and communication. High-frequency phase shifter is based on the CMOS technology, herewith amplifiers with alternating amplification ratio are based on modified Hilbert cells, and an analogue differential quadrature adder is connected to a quadrature polyphase filter directly. Each modified Hilbert cell consists of ten MOS-transistors. Herewith gates of the first and the fourth MOS-transistors are high-frequency inputs, sources of the first and the second MOS-transistors are connected to the drain of the ninth MOS-transistor, sources of the third and the fourth MOS-transistors are connected to the drain of the tenth MOS-transistor, the source of the ninth and the tenth MOS-transistors is connected to the common unit, gates of the ninth and the tenth MOS-transistors are connected to the first output of the shift voltages source, gates of the second and the third MOS-transistors are connected to the second output of the shift voltages source, drains of the first and the third MOS-transistors are connected to the unit, which is connected to sources of the fifth and the sixth MOS-transistors, drains of the second and the fourth MOS-transistors are connected to the unit, which is connected to sources of the seventh and the eighth MOS-transistors, gates of the fifth and the eighth MOS-transistors and gates of the sixth and the seventh MOS-transistors are control differential inputs, respectively, drains of the fifth and the seventh MOS-transistors and drains of the sixth and the eighth MOS-transistors are connected to two inputs of the load circuit, respectively.

EFFECT: high-frequency phase shifter on MOS-transistors with a structure according to the invention has reduced error of phase installation and power consumption, as well as lower cost.

1 cl, 3 dwg