RADIATION-RESISTANT AND LOW-TEMPERATURE OPERATIONAL AMPLIFIER ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS Russian patent published in 2021 - IPC H03F3/345 

Abstract RU 2741056 C1

FIELD: radio engineering; electronics.

SUBSTANCE: invention relates to radio engineering and analogue microelectronics. Technical result is provided by a radiation-stable and low-temperature operational amplifier circuit, implemented on complementary field-effect transistors with a p-n control junction, including first and second inputs of the device, a reference current source, first and second power supply buses, an active dynamic load in form of an uncontrolled active dynamic load and matched with a second power supply bus, a buffer amplifier whose output is the output of the device.

EFFECT: small values of zero systematic offset voltage component (Uoff), as well as increased gain (Kg) of voltage and the attenuation coefficient of in-phase input signals (Kat_if).

1 cl, 11 dwg

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Authors

Bugakova Anna Vitalevna

Zhuk Aleksei Andreevich

Prokopenko Nikolai Nikolaevich

Chumakov Vladislav Evgenevich

Dates

2021-01-22Published

2020-09-01Filed