GROWTH UNIT OF NANOHETEROEPITAXIAL STRUCTURES WITH QUANTUM DOTS FROM LIQUID PHASE Russian patent published in 2017 - IPC H01L21/208 B82B1/00 

Abstract RU 2610050 C2

FIELD: nanotechnology.

SUBSTANCE: method is performed by making a reactor in the form of cross , inside the horizontal part of which, along its axis, the cartridge with containers is moving, where it is disposed various solution-melts, containers with the bottom layers and containers for storing nanostructures for their alternative coinciding with the cylinder. The rod passes in the vertical part of the reactor through the center of the reactor bottom cover, it moves containers from the cartridge to the lower base of the cylinder for fixing the bottom layers, while creating a vacuum inside the cylinder, followed by separation of the nanostructures to the container, when the hydrogen coming inside the cylinder. Moving of the containers from the cartridge by means of the rod, results in a growth chamber creation, formed by the working surface of the bottom layer, the inner surface of the lower base of the cylinder and the surface of the saturated solution-melt, passing through the holes of the floating plate of the specified shape with different configuration of holes. The rod passes through the center of the reactor upper cover inside the cylinder, it moves the coolant from the heat container with constant temperature and the heat container in the form of a ring with a pulsed induction heating up to the rear bottom layer surface.

EFFECT: invention allows to increase the capacity of the plant, to improve the multiple positioning of the bottom layer, while increasing its diameter, to provide the epitaxial growth not only of the nanolayers, arrays of quantum dots, but also ohmic contacts of different configurations.

1 dwg

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RU 2 610 050 C2

Authors

Maronchuk Igor Evgenevich

Kulyutkina Tamara Fatykhovna

Dates

2017-02-07Published

2015-07-21Filed