METHOD FOR GROWING MULTILAYER NANOHETEROEPITAXIAL STRUCTURES WITH ARRAYS OF IDEAL QUANTUM DOTS IN VERTICAL REACTOR Russian patent published in 2019 - IPC C30B19/08 C30B19/10 C30B19/12 C30B29/42 C30B29/44 H01L21/02 H01L21/208 B82B3/00 B82Y40/00 

FIELD: chemistry.

SUBSTANCE: invention relates to nanotechnology and specifically to a method of growing multilayer nanoheteroepitaxial structures with arrays of ideal quantum dots (NHES of IQD). Method is based on processes of dissolution and crystallisation of semiconductor and metal materials from solutions-melts of low-melting metals. Method for growing multilayer nanoheteroepitaxial structures in a vertical reactor with arrays of ideal quantum dots by liquid-phase epitaxy in a stream of hydrogen or forming gas includes heating of containers with different solutions of crystallisable materials in melts of low-melting metals to their saturation temperature and monocrystalline substrate to the same temperature, wherein substrate is tightly attached by rear surface to lower base of cylinder by creation of vacuum, successive bringing of solution-melts into contact with front surface of substrate at multiple transfer by heat absorber in form of plate of cold pulses on back surface of substrate for growing epitaxial layers and arrays of quantum dots, growing epitaxial layers or arrays of ideal quantum dots from volume of solution-melt, limited by inner walls of lower base of cylinder, front surface of substrate and floating on surface of solution-melt plate with holes, through which both filling and removal of residual solution-melt in same containers during rotation of cylinder with substrate around its vertical axis, transfer of heat pulse by heat heater to back surface of substrate, value of which is less than cold pulse for dissolution of mechanically stressed wetting layers located between quantum points, removal of remnants of melt solutions from an epitaxial layer or an array of quantum dots after each growing process, subsequent growth of ohmic contacts through holes in a floating plate, in contact with the surface of the multilayer structure with multiple pulse cooling by the heat absorber of the back surface of the substrate, wherein stabilization of temperature in the vertical reactor, where containers with different solution-melts and substrate are arranged, are carried out along the vertical axis of the reactor screens in the form of plates with offset from each other holes from high-heat conducting material, temperature stabilization in cylinder is carried out with high-temperature-conducting material of cylinder, and temperature stabilization of "cold" pulse, which without medium resistance is repeatedly transferred by heat absorber inside cylinder from heated "cold" plate to back surface of substrate and back, is carried out with a "cold" plate with high heat conductivity, having a stable temperature due to a cascade of "cold" plates adjacent to it.

EFFECT: invention provides growing multi-layer NHES of IQD and building ohmic contacts on structure surface without using photolithography, as well as efficient removal of solution-melts and stressed wetting layers from gaps between quantum dots, including from metal quantum dots, by rotation of cylinder with substrate around its vertical axis.

1 cl, 6 dwg, 2 ex