DEVICE FOR LIQUID PHASE EPITAXY OF MULTILAYER SEMICONDUCTOR STRUCTURES Russian patent published in 2014 - IPC C30B19/06 H01L21/208 H01L21/368 

Abstract RU 2515316 C1

FIELD: electricity.

SUBSTANCE: device contains a body 1 with a cover 2, a container 3 with source melts reservoirs equipped with pistons 4, a multi-sectional holder 14 of substrates, a growth station 5 and channels for melts delivery and output. The container 3 with reservoirs is located under the multi-sectional holder 14 of substrates. The cover 2 is equipped with protrusions to output excess of melts. The device contains additional reservoirs 7 for a part of used melts which are installed over the container 3; each reservoir is equipped with a cover 8 with load and a port for melt discharge to the main container 3 located beneath.

EFFECT: suppressing undesired interaction of impurities in different melts for growing through gaseous phase thus improving technical or electric and physical parameters of the obtained structures.

2 cl, 2 dwg, 2 ex

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RU 2 515 316 C1

Authors

Krjukov Vitalij L'Vovich

Krjukov Evgenij Vital'Evich

Meerovich Leonid Aleksandrovich

Nikolaenko Aleksandr Mikhajlovich

Strel'Chenko Sergej Stanislavovich

Titivkin Konstantin Anatol'Evich

Dates

2014-05-10Published

2013-04-22Filed