PROCESS OF MANUFACTURE OF HETEROEPITAXIAL LAYERS OF GALLIUM ARSENIDE Russian patent published in 1996 - IPC

FIELD: semiconductor technology. SUBSTANCE: invention may find use in manufacture of device structures for micro- and optoelectronics by method of liquid epitaxy. Epitaxial growth is performed from heavily oversaturated solution-melt which is achieved thanks to high rates of cooling. Under such conditions on surface of silicon substrate there is formed great number of nuclei of crystals which grow together and create continuous planar layer having thickness not more than 1.0 μm. For reduction of solubility of silicon solution-melt is injected with germanium but in such quantity that prevents crystallization of germanium layer on substrate. Quantity of this addition of germanium which practically prevents etching of silicon substrate is found experimentally and amounts to 2-10 atomic per cent for temperature range from 500 to 700 C. EFFECT: manufacture of gallium arsenide layers on silicon substrates and their increased quality due to improvement of planning.