FIELD: electricity.
SUBSTANCE: semiconductor sensor element for determination of lead ions in an aqueous solution contains as the sensitive material a thin film of lead sulphide doped with iodine and applied onto a dielectric substrate. Forming the film is carried out by its deposition from a reaction mixture containing a lead salt, thiocarbamide, triple-substituted sodium citrate, ammonium hydroxide, ammonium iodide.
EFFECT: invention enables to obtain a semiconductor sensor element based on a lead sulphide film doped with iodine for selective determination of lead ions in aqueous solutions characterized by high sensitivity and dynamism of response, good results reproducibility, as well as availability of production.
2 cl, 1 dwg, 1 tbl
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