SEMICONDUCTOR SENSITIVE MEMBER TO SELECTIVE DETECTOR OF NITROGEN OXIDES AND METHOD FOR PRODUCING IT Russian patent published in 2007 - IPC G01N27/12 

FIELD: manufacture of semiconductor material for selective detector of nitrogen oxides.

SUBSTANCE: semiconductor material for selective detector includes as sensitive member film on base of lead sulfide applied onto dielectric substrate. Sensitive member contains in addition cadmium sulfide in the form of solid solution with lead sulfide. Relation of cadmium and lead in hard solution of sulfides Cd_xPb>i_xS is set in changing range x = 0.133 ± 0.07. Method for producing semiconductor material for selective detector of nitrogen oxides comprises steps of single-stage formation of sensitive film selectively adsorbing nitrogen oxides. Such film is deposited on dielectric substrate from reaction solution containing lead and cadmium salts, thiourea, three substituted sodium citrate, ammonium hydroxide with concentration, mol/l:Pb( CH₃COO)₂,- 0.04; Na₃C₆H₅O, - 0.3; NH₄OH, - 0.4;H₂)₂ - 0.6; CdCl_2, - 0.05.

EFFECT: possibility for producing semiconductor material for selective detector of nitrogen oxides having high sensibility and high dynamics of response of sensitive layer to gases at different detection condition.

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