PROCESS OF PRODUCTION OF SEMICONDUCTOR MATERIAL FOR SELECTIVE DETECTOR OF NITROGEN OXIDES Russian patent published in 1999 - IPC

FIELD: ecology. SUBSTANCE: process of formation of semiconductor material for selective detector of nitrogen oxides consists in single-stage chemical deposition of thin film of lead sulfide on dielectric substrate. Film is formed from reaction mixture made of lead salt, thiocarbamide, trisubstituted citric-acid sodium, ammonium hydroxide, chloride or bromide or iodide ammonium in molar relation 1:12:7:80:(2-6). Reaction mixture is injected with halogen-carrying salts to create conditions for doping of semiconductor film with halogens which provides for high sensitivity and selectivity of synthesized film to nitrogen oxides thanks to phenomenon of supercompensation of carriers of semiconductor material. EFFECT: high sensitivity and selectivity of synthesized film to nitrogen oxides. 2 dwg, 1 tbl