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2 616 668

(13)

(51)

IPC

C30B9/04(2006-01-01)

C30B9/12(2006-01-01)

C30B19/02(2006-01-01)

C30B19/12(2006-01-01)

C30B29/22(2006-01-01)

C01B35/12(2006-01-01)

H01F41/14(2006-01-01)

H01F41/28(2006-01-01)

(21) (22)

Application

2015147078, 2015-11-02

(24)

Start date

2015-11-02

(22)

Actual filing date

2015-11-02

(45)

Published

2017-04-18

(72)

Inventor

Yagupov Sergej VladimirovichStrugatskij Mark BorisovichMogilets Yuliya AleksandrovnaSelezneva Kira Andreevna

(73)

Holder

Federalnoe Gosudarstvennoe Avtonomnoe Obrazovatelnoe Uchrezhdenie Vysshego Obrazovaniya Federalnyj Universitet Imeni V.I. Vernadskogo"

METHOD OF GROWING FeBO SINGLE-CRYSTAL FILM ON DIAMAGNETIC SUBSTRATE Russian patent published in 2017 - IPC C30B9/04 C30B9/12 C30B19/02 C30B19/12 C30B29/22 C01B35/12 H01F41/14 H01F41/28

Abstract RU 2616668 C1

FIELD: chemistry.

SUBSTANCE: charge is fused in a platinum crucible, the components are taken at a ratio, wt %: Fe₂O₃ - 5.37, B₂O₃ - 51.23, PbO - 29.31, PbF₂ - 13.73. Thereinafter, the crucible with the melt-solution is placed in a growth furnace, heated to 900-950°C and maintained with stirring at said temperature for a day. Then the temperature is quickly reduced to 820-830°C, the diamagnetic crystal GaBO₃ is dipped into the melt-solution fixed on the chip carrier and maintained for 0.5-3 hours with stirring. Then the temperature is lowered slowly at a speed of 3-40°C/h to 800°C, and the chip carrier is removed from the furnace.

EFFECT: invention allows to obtain a single-crystal film FeBO₃ on the diamagnetic substrate GaBO₃.

3 dwg, 3 ex

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RU 2 616 668 C1

Authors

Yagupov Sergej Vladimirovich

Strugatskij Mark Borisovich

Mogilets Yuliya Aleksandrovna

Selezneva Kira Andreevna

Dates

2017-04-18—Published

2015-11-02—Filed