METHOD OF GROWING OF GALLIUM BORATE GaBO MONOCRYSTALS Russian patent published in 1994 - IPC

Abstract RU 2019584 C1

FIELD: chemical technology. SUBSTANCE: solution-melt containing GaBO₃, Ga₂O₃, PbO-B₂O₃ is overheated up to 950-1000 C at stirring, cooled up to 815-845 C, kept for 22-24 h at stirring. Then temperature is increased up to 820-850 C following by decreasing by law PbF₂ up to 810-840 C, where t-1 is time, hours. Components are taken at the following ratio, wt.-%: (10^-7-10^-8)t³ 16.8-18.6; Ga₂O₃ 42.4-42.9; PbO 27.3-28.2; B₂O₃ 11.7-12.1. Product is used in controlled solution-melting crystallization at PbF₂ preparing for physical experiment and optoelectronics. EFFECT: improved method of crystal growing. 1 tbl

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RU 2 019 584 C1

Authors

Рetrakovskij G.А.

Rudenko V.V.

Stepanov G.N.

Dates

1994-09-15—Published

1991-04-29—Filed