FIELD: magnonics; microwave technology.
SUBSTANCE: invention relates to creation of thin single-crystal magnetic films of yttrium iron garnet (YIG) on a non-magnetic garnet substrate with the film inheriting the crystal orientation and structure of the substrate with zero mismatch between the crystal lattice parameters of the film and the substrate. The method includes preparing a mixture containing oxides included in the composition of yttrium ferrite garnet Y3Fe5O15 and oxides of the solvent PbO and V2O5, heating the mixture in a platinum crucible to a temperature of complete melting and dissolution of the components, homogenization of the solution-melt at temperature above the saturation point of the solution for 8–10 hours, lowering the temperature of the solution-melt to the saturation point, while using substrates of gadolinium-gallium garnet with orientation (111), La3+ ions are used as a dopant in the amount of 8·10-3% of the total mass of the solution-melt, epitaxy is carried out at surface contact of the substrate with the solution-melt with the achievement of a crystallographic mismatch between the lattice parameters of the film and the substrate of less than 10-3 angstroms.
EFFECT: inheritance by the film of the crystal orientation and structure of the substrate with zero mismatch between the crystal lattice parameters of the film and the substrate leads to an increase in the quality factor of the resonant properties with a ferromagnetic resonance linewidth of less than 3 Oe of YIG films in the microwave range both in strong and weak magnetic fields, and a decrease in the values of the constant cubic anisotropy and the Hilbert spin precession relaxation parameter.
1 cl, 2 dwg
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Authors
Dates
2023-03-13—Published
2022-11-28—Filed