TECHNIQUE OF DISCRETE SEMICONDUCTOR CRYSTALS BRAZING TO CASE Russian patent published in 2017 - IPC H01L21/58 B23K1/20 

FIELD: electricity.

SUBSTANCE: technique of discrete semiconductor crystals brazing to case comprises the preliminary tinning of the lower crystal metallized surface and the case in the molten solder, the crystal moving, its pressing to the polished mirrored unmetallized surface and soaking under cooling, the crystal lifting and moving to the supposed position of joint, the crystal pressing to the bottom and its bedding-in. The brazing is carried out in the shielding atmosphere.

EFFECT: improvement of a technological process of the crystal and case joining, improvement of the solder acceptance of the brazed crystal surfaces and case, obtaining the qualitative void-free brazed joint without oxide inclusions, heat removing improvement and crystal output dissipation power ascension.

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