METHOD FOR MOUNTING COMPONENTS OF SEMICONDUCTOR DEVICE ON BASE AND MOUNTED SEMICONDUCTOR DEVICE Russian patent published in 1998 - IPC

FIELD: manufacture of high power transistors, thyristors, diodes and other semiconductor structures. SUBSTANCE: surface of metallic base under chip is finned with the same orientation of fins. Bulge is formed on surface of metallic base outside chip. Before soldering metallic base is tinned through the slit of plate applied onto surface of metallic base in such a way that its horizontal portion is arranged across said fin, its vertical portion and bulge are overlapped. After tinning, plate with slit is removed and before soldering leads are placed. One of leads is preliminarily bent and applied onto bulge in such a way that its bent portion is arranged between bulge and chip edge. At least one of other leads is applied onto outer surface of chip. Semiconductor device includes metallic base, chip mounted on base, leads, dielectric casing. Mounting end of one lead is bent near edge of chip. Surface of metallic base under chip is finned and it is electrically connected with chip by means of first solder layer. Bent portion of lead is arranged between bulge and chip edge. One lead is connected with bulge by means of said first solder layer and other lead is connected with outer surface of chip by second solder layer. EFFECT: enhanced quality of high power semiconductor devices. 7 cl, 12 dwg