FIELD: physics.
SUBSTANCE: method includes the calculation of the quantity and thickness of layers of film-forming material on the program "OptiLayer" for the wavelength of 1.351 mcm, the introduction of the calculated data and the wavelength of 1.351 mcm into the photometric device AOS 3S of the vacuum plant, preparation of the glass substrate, degassing the film-forming materials, applying the mirror coating on one side of the substrate for the wavelength of 1.351 mcm in the form of alternating unequal-thick layers of zirconium dioxide and silicon dioxide and the protective layer of silicon dioxide by electron beam evaporation in the vacuum plant with a controlled thickness of each layer to change the transmittance at the wavelength of 1.067 mcm. The first layer is made of zirconium dioxide. On the back surface of the substrate, an antireflective coating is applied for radiation with a wavelength of 1.067 mcm with a lower reflection coefficient than from the surface with a mirror coating.
EFFECT: increasing the reflection coefficient of the mirror for wavelengths of 1,351 mcm and 1,54 mcm and decreasing the reflection coefficient at a wavelength of 1,067 mcm.
3 cl, 1 dwg
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Authors
Dates
2017-12-06—Published
2016-11-29—Filed