METHOD AND DEVICE FOR ELECTROLYTIC DOPING OF SEMICONDUCTOR COMPOUNDS WITH INDIUM AND GALLIUM Russian patent published in 2018 - IPC G01N27/406 H01L21/22 

FIELD: instrument engineering.

SUBSTANCE: invention relates to methods and devices for doping semiconductor compounds and can find application in instrument engineering and microelectronics. Method of electrochemical doping of semiconductor compounds with indium and gallium involves the transfer of In³⁺ and Ga³⁺ ions in the electrochemical system with glass-carbon electrodes at an elevated temperature from an anodically polarized donor made with metallic indium and gallium, through a solid electrolyte ion-selective membrane into a cathodically polarizable semiconductor compound with a temperature rise by 50–100 °C at the system equilibrium and continuation of processing until the nanophases of indium and gallium are released on the cathode surface. Device includes a housing made of a non-conductive thermally stable material and hermetically housed inside the housing and pre-supplied current-carrying electrodes made of glass carbon, a semiconductor non-stoichiometric compound, an indium- and gallium-conductive solid electrolyte ion-selective membrane, on the end surface of which at the anode side there is a cavity filled with indium and gallium donor and closed by current-conducting electrode.

EFFECT: doping of semiconductor compounds.

8 cl, 3 dwg, 1 tbl