FIELD: chemistry.
SUBSTANCE: invention relates to equipment, related to processes of ion-plasma alloying of semiconductors and can be used in making solar cells, semiconductor instruments and integrated microcircuits based on silicon. Doping technique of silicon consists in that silicon plate is treated in glow discharge of inert gases, non-doped dopant source used is heavily doped electrode in form of plate made of heterogeneous silicon alloy with phosphorus or boron, and alloying is carried out at alternate polarity of voltage pulses supplied to electrodes. Plasma alloying can be carried out without special safety measures and exclusion of expensive highly toxic fire and explosion hazardous gases, which simplifies process and reduces costs. Before ion-plasma treatment resistance silicon plate resistance is equal to 10 Ohm, after processing it decreases to 3 Ohm that testifies to improvement of technical and economic parameters of silicon alloying.
EFFECT: alloying.
1 cl
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