METHOD OF CARBON FILM OBTAINING Russian patent published in 2018 - IPC C01B32/00 C01B32/184 C23C16/26 C23C24/08 B82B3/00 B82Y40/00 

FIELD: electrical engineering.

SUBSTANCE: invention relates to semiconductor and superconductor electronics. Carbonaceous material – a natural mineral schungite with a particle size of 0.01–1 mcm is placed in the evaporation zone 1 of the thermal chamber. Evaporator is heated to a sublimation temperature of 350–400 °C. Then raise the temperature to 750 °C with a speed of 3–5 °C/min. In addition, molding zones 2 and thermostabilization 5 are provided, separated by substrate 3 located in condensation zone 4. Temperature of evaporation zone 1 is set higher than the temperature of molding zone 2, and the temperature of thermostabilization zone 5 is less than the temperature of molding zone 2. As a result of the condensation of carbon in the vacuum of carbon onto preheated substrate 3, a carbon film uniform in composition, 1 mm in size and larger and 0.1 mcm in thickness and larger, is obtained with a reduction in the energy intensity of the process.

EFFECT: invention can be used in the manufacture of photonic devices, super-capacious batteries and supercapacitors, highly sensitive chemical sensors and separation membranes.

1 cl, 4 dwg