METHOD OF PREPARING CRYSTALLINE FULLERENES Russian patent published in 1999 - IPC

FIELD: carbon materials. SUBSTANCE: invention relates to methods of manufacturing functional devices based on fullerenes. Crystalline fullerenes prepared by method of invention can find use as base to create conducting and superconducting materials. Invention allows large-size (at least 1 mm) and greater- thickness (at least 1 mm) chemically homogeneous crystalline fullerene films to be formed. Fullerene sublimation is carried out in thermal chamber by heating fullerenes in evaporation zone to temperature superior to crystallization zone temperature, after which temperature in crystallization zone is raised at regular time intervals. Additional formation zone is created, above which forming element is placed and in which temperature superior to crystallization zone temperature is established. Variation of formation zone area and displacement of forming element relative to formation zone are permissible. Applying material with reduced adhesion to fullerene, e.g. of amorphous carbon, on forming element is as well possible. Possible is also simultaneously applying material with elevated adhesion to fullerene, e.g. Ia and Ib group metals. EFFECT: extended process possibilities. 5 cl, 3 dwg