FIELD: technological processes.
SUBSTANCE: invention relates to a technology for preparation of complex oxides and can be used to create multifunctional devices in microelectronics. Method for the preparation of complex thulium and iron oxide TmFe2O4±δ includes the preparation of a mixture of iron(III) and thulium(III) oxide and its heat-treatment. Original oxides are pre-dried at a temperature of 550 °C and mixed in a ratio of Fe2O3 : Tm2O3 = 1.00:0.47. Heat-treatment of the obtained mixture is carried out at temperature of 1,090 °C in a gas medium consisting of inert gas and oxygen, while maintaining preset oxygen pressure in the range of lgPo2(atm)=(-12.3)÷(-13.1).
EFFECT: invention makes it possible to obtain single-phase thulium and iron oxide, to control oxygen non-stoichiometry of obtained a complex oxide.
1 cl, 3 dwg
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Authors
Dates
2018-06-29—Published
2017-06-28—Filed