CLEANED OF IMPURITIES GERMANIUM INGOT PRODUCTION METHOD Russian patent published in 2018 - IPC C22B9/02 C22B41/00 

FIELD: metallurgy.

SUBSTANCE: invention relates to the field of non-ferrous metallurgy, in particular, to the semiconductor materials production, and can be used in the raw germanium production used for growing of single crystals for optical applications. Cleaned of impurities germanium ingot is produced by the germanium dispersing in the reaction chamber until the drop-gas mixture under the reducing medium. Containing the metal receiver reaction chamber is evacuated, heated to a temperature of 950–1,000 °C to melt the germanium, after which introducing the pre-heated to 525–545 °C reagent gas into the reaction chamber to create the reducing medium. Metal receiver with germanium melt is set to rotate at 25–30 rpm. Dispersing is performed by the melt metered flow from the metal receiver at a flow rate of 0.1–0.12 kg/min onto the horizontally installed in reaction chamber rotating sprinkler and spraying under centrifugal force. At that, ensuring the melt drops passage through the reagent gas medium, flowing on the reaction chamber walls and its accumulation on the reaction chamber bottom. After the melt crystallization and the reaction chamber cooling down, the withdrawing the produced germanium ingot.

EFFECT: method allows to improve the raw germanium purification quality.

5 cl, 1 dwg, 2 ex